4. 基于新型二维材料(Graphene,TMDS)体系的量子器件制备和量子物理研究
二维材料体系由于其独特的结构和性质优越性,被科学界大量研究,特别是单层石墨烯材料,以及最近掀起一波研究热潮的TMD材料体系。我们研究团队在实验室内设计制备了多种石墨烯量子点元器件,2009年在国际上首先制备出石墨烯量子点+单电子测量器的芯片( Applied. Phys. Letters 97, 262113 (2010)),特别是制备出了世界上第一块并联的石墨烯双量子点样品( Applied. Phys. Letters 99, 112117 (2011)),开发了集成测量读出系统的全石墨单电子晶体管;设计了石墨烯量子点元器件的全电学操控模式,掌握了精细调节电极控制量子点器件上电子状态的规律和方法;另外我们在国际上率先提出了石墨烯量子点量子计算的完整方案等;我们设计的石墨烯结构和尺寸等方面的优势在国际上也居于比较前列的位置。近期我们也开展了关于TMDs材料方面的量子器件研究,取得了一些重要的实验结果。

相关文献
1.Xiang-Xiang Song, Di Liu, Guo-Ping Guo, et al. A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2, e-print arXiv:1501.04377 (2015).
2.Xiang-Xiang Song, Hai-Ou Li, Guo-Ping Guo, et al. Suspending Effect on Low-FrequencyCharge Noise in Graphene QuantumDot. Scientific Reports 5, 8142 (2015).
3.Da Wei, Hai-Ou Li, Guo-Ping Guo, et al. Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates, Scientific Reports 3, 3175 (2013).
4.Lin-Jun Wang, Hai-Ou Li, Guo-Ping Guo, et al. Controllable tunnel coupling and molecular states in a graphene double quantum dot, Applied Physics Letters 100, 022106 (2012).
5.L. J. Wang, G. P. Guo, Gang Cao, et al. Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene, Appl. Phys. Lett. 99, 112117 (2011).
6.L. J. Wang, G. Cao, G. P. Guo, et al. A Graphene Quantum Qot with a Single Electron Transistor as an Integrated Charge Sensor, Applied Physics Letters 97, 262113 (2010).