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报告时间：4月10日 周三 上午9:30

报告地点：实验室一楼会议室

报告人：电子科技大学 李雪松教授

报告题目： 石墨烯化学气相沉积法可控制备（Controllable synthesis of graphene by chemical vapor deposition）

报告摘要： 

     To date, synthesis of graphene by chemical vapor deposition of hydrocarbons, particularly on Cu substrate, exhibits great potential as a cost-effective way to produce high-quality and large-area graphene films. Control on graphene crystal size, growth rate, layer number, defects, etc. is the key to develop graphene synthetic techniques. This talk focuses on the following aspects: (1) Other than the wildly investigated processing parameters such as temperature and reaction gases, we identified the carbon and oxygen contamination in the CVD system and revealed how they affect system reliability, which is helpful to further understand graphene growth kinetics. (2) We synthesized large-area single-layer graphene without any adlayers in a simple way by just suspending the Cu foil. The finding is not only of great significance for the industrial production of large-area adlayer-free SLG films but also instructive for the synthesis of homogeneous few-layer graphene. (3) We synthesized highly aligned graphene domains on almost arbitrary Cu surface, providing a more facile way for the synthesis of large-area graphene single crystal. (4) We proposed a general and simple method to evaluate the electrical transport performance of graphene by the van der Pauw – Hall measurement.

报告人简介： 

     电子科技大学电子科学与工程学院，电子薄膜与集成器件国家重点实验室教授。