摘要：The success of the microelectronic industry over the past several decades was mainly driven by the steady dimensional scaling of MOSFET transistors. The aggressive miniaturization of the MOSFET device has raised big challenges to their metal-semiconductor contacts. This talk will start with a short review on the device scaling history and the evolution of the self-aligned contact technology. The emerging demands on the contact technology will be discussed according to the projection of device miniaturization. Then the scaling behavior of different silicide contact materials and a novel self-limiting process to form ultra-thin silicide will be shown, and followed by the silicide/Si interface engineering for the Schottky barrier modification. Finally, example innovations enabled by the advanced contact technology in extremely scaled planar and 3-D type CMOS transistors, carbon based devices and low noise transducers will be presented and discussed.